Abstract

The ideas of pseudogap and nanocrystals have applied to mechanism of electrical conduction in silicate glass doped by oxides of transition metals (thick film resistors). Pseudogap is formed near the valence band of the glass due to diffusion of dopant atoms into the glass in calcination. Nanocrystals are generated in the glass in melting process and undergo structure transitions at high temperatures. This approach lets to explain the temperature dependence of conductivity of doped silicate glass from liquid helium up to 1100 K.

中文翻译：

---

伪硅酸盐玻璃，纳米晶体和掺杂硅酸盐玻璃的电导率

摘要

伪间隙和纳米晶体的思想已应用于掺杂过渡金属氧化物（厚膜电阻器）的硅酸盐玻璃的导电机理。由于煅烧中掺杂剂原子向玻璃中的扩散，在玻璃的价带附近形成了Pseudogap。纳米晶体在熔化过程中在玻璃中生成，并在高温下经历结构转变。这种方法可以解释高达1100 K的液态氦中掺杂硅酸盐玻璃的电导率与温度的关系。