Heterogeneous integration of materials with a negative thermo-optic coefficient is a simple and efficient way to compensate the strong detrimental thermal dependence of silicon-on-insulator devices. Yet, the list of materials that are both amenable for photonics fabrication and exhibit a negative TOC is very short and often requires sacrificing loss performance. In this work, we demonstrate that As₂₀S₈₀ chalcogenide glass thin-films can be used to compensate silicon thermal effects in microring resonators while retaining excellent loss figures. We present an experimental characterization of the glass thin-film and of fabricated hybrid microring resonators at telecommunication wavelengths. Nearly athermal operation is demonstrated for the TM polarization with an absolute minimum measured resonance shift of 5.25 pm K⁻¹, corresponding to a waveguide effective index thermal dependence of 4.28×10^-6 RIU/K. We show that the thermal dependence can be controlled by changing the cladding thickness and a negative thermal dependence is obtained for the TM polarization. All configurations exhibit unprecedented low loss figures with a maximum measured intrinsic quality factor exceeding 3.9 × 10⁵, corresponding to waveguide propagation loss of 1.37 dB cm⁻¹. A value of−4.75(75)×10^-5 RIU/K is measured for the thermo-optic coefficient of As₂₀S₈₀ thin-films.

中文翻译：

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用于无热和高Q硅微环谐振器的富硫硫族化物覆层

具有负热光系数的材料的异质集成是一种简单有效的方法，可以补偿绝缘体上硅器件的强烈有害的热依赖性。然而，既适合光子学制造又具有负TOC的材料清单非常短，通常需要牺牲损耗性能。在这项工作中，我们证明了₂₀ S ₈₀硫族化物玻璃薄膜可用于补偿微环谐振器中的硅热效应，同时保持出色的损耗系数。我们提出了在电信波长下的玻璃薄膜和制造的混合微环谐振器的实验表征。对于TM偏振，证明了几乎非热操作，具有5.25 pm K ^-1的绝对最小测得的共振位移，对应于波导有效折射率热依赖性为4.28×10 ^-6 RIU / K。我们表明，可以通过改变包层厚度来控制热依赖性，并且对于TM偏振获得负的热依赖性。所有配置均展现出空前的低损耗数据，其最大测得的固有品质因数超过3.9×10^{如图5所示}，对应于1.37dB cm ^-1的波导传播损耗。对于As ₂₀ S ₈₀薄膜的热光系数，测量值为-4.75（75）×10 ^-5 RIU / K。