The crystal structure, Raman vibration, chemical bond characteristics, and microwave dielectric properties of Zn_1-xCu_xWO₄ (x = 0–0.15) ceramics prepared by a solid-state reaction were investigated by XRD refinement, Raman spectroscopy, P-V-L theory and XPS. According to the P-V-L theory, the properties of the W-O bond are stronger than those of the Zn-O bond, which makes a major contribution to the dielectric properties. The relative permittivity is mainly affected by the average bond ionicity, and the variations in the dielectric loss and τ_f are mainly attributed to the lattice energy and bond energy. XPS shows that the presence of Cu⁺ could produce oxygen vacancy defects, increasing the dielectric loss. Additionally, Raman spectra show that the increasing molecular polarizability causes the Raman shift to move to a low wavenumber, and the changes in Raman intensity and FWHM lead to a decrease in the degree of short-range ordering. Particularly, Zn_0.97Cu_0.03WO₄ ceramics sintered at 925 °C showed satisfactory properties (ε_r = 14.20, tanδ = 1.473 × 10⁻⁴ at 9.087 GHz, and τ_f = −40 ppm/°C), which can potentially be applied to LTCC technology and indicate that Cu substitution can not only reduce the sintering temperature, but also optimize the dielectric properties.

通过XRD精修、拉曼光谱、PVL理论研究了固态反应制备的Zn _1-x Cu _x WO ₄ (x = 0-0.15)陶瓷的晶体结构、拉曼振动、化学键特性和微波介电性能和 XPS。根据 PVL 理论，WO 键的性能强于 Zn-O 键的性能，这对介电性能做出了主要贡献。相对介电常数主要受平均键离子度的影响，介电损耗和 τ _{f 的}变化主要归因于晶格能和键能。XPS 表明 Cu ⁺会产生氧空位缺陷，增加介电损耗。此外，拉曼光谱表明，分子极化率的增加导致拉曼位移向低波数移动，拉曼强度和 FWHM 的变化导致短程有序度的降低。特别是，在 925 °C 下烧结的Zn _0.97 Cu _0.03 WO ₄陶瓷表现出令人满意的性能（ε _r  = 14.20，tan δ  = 1.473 × 10 ^-4  at 9.087 GHz，τ _f  = -40 ppm/°C），这可能应用于LTCC技术，表明Cu取代不仅可以降低烧结温度，还可以优化介电性能。