10 MeV proton-irradiation effects on a YBCO-based test structure were analyzed by measuring its current-voltage (IV) characteristics for different cumulated fluences. For fluences of up to ~ 80⋅10⁹ p/cm² no changes in the electrical behavior of the device were observed, while for a fluence of ~ 300⋅10⁹ p/cm² it becomes less conducting. A detailed analysis of the room temperature IV characteristics based on the γ power exponent parameter [γ = dLn(I)/dLn(V)] allowed us to reveal the main conduction mechanisms as well as to establish the equivalent circuit model of the device. The changes produced in the electrical behavior, in accordance with Monte Carlo TRIM simulations, suggest that the main effect induced by protons is the displacement of oxygen atoms within the YBCO lattice, particularly from oxygen-rich to oxygen-poor areas, where they become trapped.

通过测量不同累积通量的电流-电压（IV）特性，分析了10 MeV质子辐照对基于YBCO的测试结构的影响。最多的能量密度至〜80⋅10 ⁹ P /厘米²，观察到在该装置的电性能没有改变，而对于〜300⋅10积分通量⁹ P /厘米²就变得不太导通。基于γ幂指数参数[ γ  =  dLn（I）/ dLn（V）]使我们能够揭示主要的传导机制以及建立器件的等效电路模型。根据蒙特卡洛TRIM模拟，电行为产生的变化表明，质子感应的主要作用是YBCO晶格中氧原子的位移，特别是从富氧区到贫氧区，这些原子被俘获。