We investigate the inductively coupled plasma (ICP) etching characteristics of (0002) Aluminum Nitride (AlN) and Aluminum Scandium Nitride (Al_0.94Sc_0.06N) piezoelectric thin films as well as the implementation on piezoelectric lamb wave resonators. A profile of 84° is obtained on AlN thin film, with an etching rate of approximately 230 nm/min, and a selectivity of 0.77:1 relative to photoresist mask. A nearly 80° profile and over 30:1 selectivity are accomplished using Ni film as the etching mask. Al_0.94Sc_0.06N film has achieved a profile of 77° by optimizing the RF power. Finally, AlN contour mode resonators (CMRs) are fabricated and characterized, and a CMR operating at about 400 MHz with a quality factor exceeding 1600 has been demonstrated.

我们研究（0002）氮化铝（AlN）和氮化铝Aluminum（Al _0.94 Sc _0.06 N）压电薄膜的电感耦合等离子体（ICP）蚀刻特性，以及在压电Lamb波谐振器上的实现。在AlN薄膜上获得84°的轮廓，相对于光刻胶掩模，蚀刻速率约为230 nm / min，选择性为0.77：1。使用镍膜作为蚀刻掩模，可以实现接近80°的轮廓和超过30：1的选择性。铝_0.94 Sc _0.06通过优化RF功率，N膜已达到77°的轮廓。最终，制造并表征了AlN轮廓模式谐振器（CMR），并证明了工作在约400 MHz且品质因数超过1600的CMR。