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Thermal Conductivity and Thermoelectric Power of Compounds in the Cu–Ge–As–Se System
Technical Physics ( IF 0.7 ) Pub Date : 2021-02-28 , DOI: 10.1134/s1063784221010187
O. P. Shchetnikov , N. V. Melnikova , A. N. Babushkin , V. M. Kiseev

Abstract

The influence of temperature (in the interval of 300–400 K) and concentrations on the electrical conductivity, thermal conductivity, and thermoelectric power of copper chalcogenide-based crystals with the general formula (GeSe)1 – x(CuAsSe2)x has been considered. Heat transfer mechanisms have been determined. It has been found that the temperature dependence of thermal conductivity is nonmonotonic with a singularity at 358 K. Thermoelectric figure of merit ZT has been calculated.



中文翻译:

Cu-Ge-As-Se系统中化合物的热导率和热电功率

摘要

温度的影响(在300-400 K的间隔),并且在导电性,导热性,以及热电发电铜基于硫族化合物晶体与通式浓度(GESE)1 - X(CuAsSe 2X一直经过考虑的。已经确定了传热机理。已经发现,导热系数的温度依赖性是非单调的,在358 K时具有奇异性。已经计算出热电因数ZT

更新日期:2021-02-28
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