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Design and optimization of top-Gaussian illumination field in photolithography
Optical Engineering ( IF 1.1 ) Pub Date : 2021-02-01 , DOI: 10.1117/1.oe.60.2.025106
Xiaozhe Ma 1 , Fang Zhang 1 , Zhiyuan Niu 1 , Huijie Huang 1
Affiliation  

Top-Gaussian illumination generation technology has considerable application prospects in photolithography. We propose a detailed design and optimization method for the optical component that generates the top-Gaussian illumination field. This method can generate a field with a specific profile in the scan direction and a rectangular distribution in the nonscan direction. The energy density is reduced by jointly designing the first and second microlens arrays (MLAs). Thus, design freedom becomes more extensive. The requirements of the illumination field are met by the designed top-Gaussian illumination field, whose dimensions in the scan and nonscan directions are insensitive to illumination mode. Furthermore, the influences of the rectangular distribution dimension and the Gaussian distribution σ errors on the dimension of the top-Gaussian distribution are studied. The design results show that the maximum energy density in the second MLA can be reduced to 17.43% of that in the general design method. The analysis results indicate that the full-width-at-half-maximum error of the rectangular illumination field in the scan direction should be restricted within ±0.3 mm, and the σ error of the Gaussian distribution should be restricted within ±0.05 deg. The proposed method should increase the service life of the key component of the photolithography machine, and the cost of the manufacture and maintenance may be decreased.

中文翻译:

光刻中高斯顶照明场的设计与优化

顶高斯照明产生技术在光刻技术中具有相当大的应用前景。我们为产生顶部高斯照明场的光学组件提出了详细的设计和优化方法。该方法可以生成在扫描方向上具有特定轮廓且在非扫描方向上具有矩形分布的场。通过共同设计第一和第二微透镜阵列(MLA),可以降低能量密度。因此,设计自由度变得更加广泛。设计的顶部高斯照明场可以满足照明场的要求,该高斯照明场在扫描方向和非扫描方向上的尺寸对照明模式不敏感。此外,研究了矩形分布尺寸和高斯分布σ误差对顶部高斯分布尺寸的影响。设计结果表明,第二个MLA中的最大能量密度可以降低到常规设计方法中的最大能量密度。分析结果表明,矩形照明场在扫描方向上的半峰全宽误差应限制在±0.3 mm之内,高斯分布的σ误差应限制在±0.05度之内。所提出的方法应该增加光刻机的关键部件的使用寿命,并且可以降低制造和维护的成本。在一般设计方法中占43%。分析结果表明,矩形照明场在扫描方向上的半峰全宽误差应限制在±0.3 mm之内,高斯分布的σ误差应限制在±0.05度之内。所提出的方法应该增加光刻机的关键部件的使用寿命,并且可以降低制造和维护的成本。在一般设计方法中占43%。分析结果表明,矩形照明场在扫描方向上的半峰全宽误差应限制在±0.3 mm之内,高斯分布的σ误差应限制在±0.05度之内。所提出的方法应该增加光刻机的关键部件的使用寿命,并且可以降低制造和维护的成本。
更新日期:2021-02-26
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