High-density micro light-emitting diode (μ-LED) arrays are key to next-generation ultrahigh-resolution displays. As a novel candidate, we report monolithic vertically stacked full-color LEDs consisting of Eu-doped GaN and InGaN quantum wells (QWs). Initially growing Eu-doped GaN, which shows a narrow linewidth ultra-stable red emission, allows vertically stacked growth of subsequent InGaN-QW-based blue/green LEDs while maintaining a high crystal quality. Electroluminescence from full-color LEDs has a remarkably wide color gamut, corresponding to 105.5% (147.0%) of the area with 91.2% (96.5%) coverage of the standards of Rec. 2020 (DCI-P3) at its maximum. The maximum luminance of the full-color LEDs reaches ∼3100cd m⁻².

高密度微发光二极管（μ - LED）阵列是下一代超高分辨率显示器的关键。作为一种新颖的候选方法，我们报告了由Eu掺杂的GaN和InGaN量子阱（QW）组成的单片垂直堆叠的全色LED。最初生长的Eu掺杂的GaN表现出窄的线宽超稳定红色发射，可以在保持高晶体质量的同时垂直堆叠生长随后的基于InGaN-QW的蓝/绿LED。全色LED的电致发光具有非常宽的色域，相当于该区域的105.5％（147.0％），覆盖着Rec.91.2％（96.5％）的标准。2020年（DCI-P3）达到最大值。全色LED的最大亮度达到〜3100cd m ^-2。