3-D-TCAD results are presented showing current density profiles for triggered GGNmosts with substantial, and with minimal, drain ballast resistance. That same variation is repeated on two more GGNmosts with reduced source ballast resistance, which reduces the electron–hole current ratio. The simulated current density profiles fill only part of the device, while in the complementary part of the device no current flows. Between these parts, boundary regions exist in which the current density decreases from its peak value to zero. The width of these boundary regions is set by carrier diffusion, and can therefore not be arbitrarily small. As this article shows, the result is that the boundary regions can contribute to GGNmost current spreading. Moreover, the boundary regions can exist in a stable manner over time, and this article shows the physical mechanism by which this happens. Finally, this article shows how boundary regions manifest themselves in TLP ${I}$ ( ${V}$ )-curves: features relating to boundary regions are identified in TLP ${I}$ ( ${V}$ )-curves simulated by 3-D-TCAD, and then replicated in measured TLP ${I}$ ( ${V}$ )-curves. Bottom line is that boundary regions can help spread current in a GGNmost.

中文翻译：

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接地栅极附近的边界区域及其对电流扩散的贡献

给出了3-D-TCAD结果，显示了触发GGNmost的电流密度曲线，具有相当大的漏极镇流电阻，而其电阻却很小。在具有降低的源镇流电阻的另外两个GGNmost上重复相同的变化，从而降低了电子空穴电流比。模拟的电流密度分布图仅填充设备的一部分，而在设备的互补部分中没有电流流动。在这些部分之间，存在边界区域，其中电流密度从其峰值减小到零。这些边界区域的宽度通过载流子扩散来设定，因此不能任意小。如本文所示，结果是边界区域可以促进GGN电流的最大扩展。而且，边界区域可以随着时间稳定地存在，本文介绍了发生这种情况的物理机制。最后，本文显示了边界区域如何在TLP中表现出来 $ {I} $ （ $ {V} $ ）曲线：在TLP中确定了与边界区域有关的特征 $ {I} $ （ $ {V} $ ）曲线，通过3-D-TCAD模拟，然后在测量的TLP中复制 $ {I} $ （ $ {V} $ ）-曲线。底线是边界区域可以帮助在GGNmost中扩散电流。