An analytical thermal model to predict the peak temperature in silicon-on-insulator (SOI)-FinFET-like structures is proposed. The device is divided into two regions based on two separate heat flow paths and each region is analyzed and modeled independently to estimate the corresponding peak temperature. Later both the models are combined to obtain the peak temperature for the device. The temperature dependence of thermal conductivity of the semiconductor material is considered in the model. Modeling results show a high level of correlation with the 3-D COMSOL and electrothermal TCAD simulation for practical range of device dimensions and power densities. Finally, the model is validated with experimental data.

中文翻译：

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考虑二维热流的 SOI-FinFET 类结构中的峰值温度建模


提出了一种分析热模型来预测绝缘体上硅 (SOI)-FinFET 类结构的峰值温度。该设备根据两个独立的热流路径分为两个区域，每个区域都经过独立分析和建模，以估计相应的峰值温度。随后，将两个模型组合起来以获得器件的峰值温度。模型中考虑了半导体材料热导率的温度依赖性。建模结果显示，在器件尺寸和功率密度的实际范围内，与 3-D COMSOL 和电热 TCAD 仿真具有高度相关性。最后，利用实验数据对模型进行了验证。