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Polycrystalline/Amorphous HfO2 Bilayer Structure as a Gate Dielectric for β-Ga2O3 MOS Capacitors
IEEE Transactions on Electron Devices ( IF 2.9 ) Pub Date : 2021-01-29 , DOI: 10.1109/ted.2021.3053189
Jeong Yong Yang , Jiyeon Ma , Chan Ho Lee , Geonwook Yoo

We report the comparison of the atomic layer deposited polycrystalline (p-)/amorphous (a-) HfO 2 bilayer gate dielectric with p-HfO 2 /a-Al 2 O 3 for enhanced $\beta $ -Ga 2 O 3 metal oxide semiconductor capacitors (MOSCAPs). A discrepancy in the temperature-dependent hysteretic behaviors is observed, and thus, pulse capacitance–voltage ( ${C}$ ${V}$ ) measurements are employed to investigate interface properties at the border between the amorphous (Al 2 O 3 or HfO 2 ) and polycrystalline (HfO 2 ) oxide layers. The proposed p-HfO 2 /a-HfO 2 exhibits similar interface trap densities ( ${D}_{\text {it}}$ ) at the interface between the bilayer dielectric and $\beta \text {-Ga}_{{2}}\text {O}_{{3}}$ , and shows lower border trap density ( ${N}_{\text {bt}}$ ). An effective barrier height of 1.62 eV for the p-HfO 2 /a-HfO 2 with a breakdown field of 9.1 MV/cm, which is higher than 1.01 eV of p-HfO 2 /a-Al 2 O 3 , is obtained from the current density-voltage ( ${J}$ ${V}$ ) characteristics using the Folwer–Nordheim model. Moreover, as compared with a p-HfO 2 single layer, the additional a-HfO 2 layer on top of p-HfO 2 is beneficial to improve hysteretic and leakage characteristics, while maintaining its high-quality interface. The p-HfO 2 /a-HfO 2 bilayer with improved interface properties as well as a large positive flat-band voltage of 4.7 V is a promising candidate for the metal/high- ${k}$ stack of $\beta $ -Ga 2 O 3 MOSCAPs.

中文翻译:

多晶/非晶HfO 2双层结构作为栅介质β-Ga 2 O 3 MOS电容器

我们报告比较原子层沉积的多晶(p-)/非晶(a-)HfO 2双层栅极电介质与p-HfO 2 / a-Al 2 O 3的增强作用 $ \ beta $ -Ga 2 O 3金属氧化物半导体电容器(MOSCAP)。观察到温度相关的磁滞行为存在差异,因此,脉冲电容-电压( $ {C} $ $ {V} $ )测量用于研究非晶(Al 2 O 3或HfO 2 )和多晶(HfO 2 )氧化物层之间边界的界面性质 。提出的p-HfO 2 / a-HfO 2具有相似的界面陷阱密度( $ {D} _ {\ text {it}} $ )在双层电介质和 $ \ beta \ text {-Ga} _ {{2}} \ text {O} _ {{3}} $ ,并显示较低的边界陷阱密度( $ {N} _ {\ text {bt}} $ )。1.62电子伏特的有效势垒高度的p的HfO 2 /α-的HfO 2与9.1 MV / cm,这对的HfO高于1.01电子伏特的击穿场 2 /α-的Al 2 ö 3 ,从获得的电流密度-电压( $ {J} $ $ {V} $ )的特性,使用Folwer-Nordheim模型。另外,作为与p相比较的HfO 2单层中,附加一个-HFO 2在p的HfO的顶层 2,有利于提高滞后和漏电特性,同时保持其高质量接口。具有改善的界面特性以及4.7 V的大正平带电压的p-HfO 2 / a-HfO 2双层是金属/高纯金属的有希望的候选者 $ {k} $ 一叠 $ \ beta $ -Ga 2 O 3 MOSCAP。
更新日期:2021-02-26
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