As one of the key aspects in the reliability of redox-based resistive switching memories (ReRAMs), maximizing their endurance is of high relevance for industrial applications. The major limitation regarding endurance is considered the excessive generation of oxygen vacancies during cycling, which eventually leads to irreversible RESET failures. Thus, the endurance could be increased by using combinations of switching oxide and ohmic electrode (OE) metal that provides a high barrier for the generation of oxygen vacancies [defect formation energy (DFE)]. In this work, we present a sophisticated programming algorithm that aims to maximize the endurance within reasonable measurement time. Using this algorithm, we compare ReRAM devices with four different OE metals and confirm the theoretically predicted trend. Thus, our work provides valuable information for device engineering toward higher endurance.

中文翻译：

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欧姆电极对基于氧化物的电阻式开关记忆体耐力的影响

作为基于氧化还原的电阻式开关存储器（ReRAM）可靠性的关键方面之一，最大程度地提高其耐用性与工业应用息息相关。关于耐力的主要限制被认为是在循环过程中氧气空位的过度产生，这最终导致不可逆的RESET故障。因此，可以通过使用开关氧化物和欧姆电极（OE）金属的组合来增加耐久性，该组合氧化物为氧空位的产生提供了高势垒[缺陷形成能（DFE）]。在这项工作中，我们提出了一种复杂的编程算法，旨在在合理的测量时间内最大化耐久性。使用该算法，我们将ReRAM器件与四种不同的OE金属进行了比较，并确认了理论上的预测趋势。因此，