This study investigates an improvement in memory characteristics through depositing an In ₂ O ₃ layer as an oxygen ion reservoir in the switching layer (SL) of resistive random access memory (RRAM). The deposition of In ₂ O ₃ , denoted as Pt/HfO ₂ /In ₂ O ₃ /TiN device, provides better memory characteristics including lower forming voltage ( ${V}_{F}$ ), set/reset voltage ( ${V}_{\mathrm {SET}}/{V}_{\mathrm {RESET}}$ ), larger memory window, and higher resistances with higher uniformity at low resistance state (LRS) and high resistance state (HRS), compared to the devices without the In ₂ O ₃ deposition, denoted as Pt/HfO ₂ /TiN device. The conduction mechanisms, verified through fitting current–voltage ( ${I} - {V}$ ) curves, are consistent with the results of a varied temperature ${I} - {V}$ experiment. Finally, a physical model is proposed to explain our observations.

中文翻译：

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通过在基于HfO 2的电阻式随机存取存储器中插入氧化铟层作为氧离子存储层来提高性能

这项研究研究了通过在电阻随机存取存储器（RRAM）的开关层（SL）中沉积In ₂ O ₃层作为氧离子存储层来改善存储特性 。In ₂ O ₃的沉积（ 表示为Pt / HfO ₂ / In ₂ O ₃ / TiN器件）提供了更好的存储特性，包括较低的形成电压（ $ {V} _ {F} $ ），设置/重置电压（ $ {V} _ {\ mathrm {SET}} / {V} _ {\ mathrm {RESET}} $ 与没有In ₂ O ₃沉积的器件（表示为Pt / HfO ₂ / TiN器件）相比，在低电阻状态（LRS）和高电阻状态（HRS）下具有更大的存储窗口和更高的电阻，并具有更高的均匀性 。传导机制，通过拟合电流-电压（ $ {I}-{V} $ ）曲线，与温度变化的结果一致 $ {I}-{V} $ 实验。最后，提出了一个物理模型来解释我们的观察结果。