We demonstrate the bistable microelectromechanical system (MEMS) sleep-transistor for CMOS integrated circuits (ICs). The sleep transistor has infinite sleep mode resistance and ~2.5-Ω resistance in active mode. The hold bias in active mode is zero for the bistable MEMS sleep transistor. The proposed bistable MEMS switch is an ideal candidate for gating the power-hungry digital circuits. The dynamic random access memory (DRAM) supply rails gated with bistable MEMS sleep transistors offer ~6 order reduction in refresh rate. This article also reports on the design guidelines for the CMOS compatible fabrication of bistable MEMS sleep transistor. Only ~0.31 pJ of energy is consumed, in toggling between the modes of bistable MEMS sleep transistor. The MEMS gate can drive large area CMOS circuit blocks with fuse current density of ~0.5 mA/μm 2 . Furthermore, the fabrication of the bistable MEMS sleep transistor is critical in the aspect that its design is a play between restoring and adhesion forces.

中文翻译：

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使用双稳态 MEMS 开关作为睡眠晶体管降低 DRAM 的动态


我们展示了用于 CMOS 集成电路 (IC) 的双稳态微机电系统 (MEMS) 睡眠晶体管。睡眠晶体管在睡眠模式下具有无限大的电阻，在活动模式下具有约 2.5Ω 的电阻。对于双稳态 MEMS 睡眠晶体管，活动模式下的保持偏置为零。所提出的双稳态 MEMS 开关是门控高耗电数字电路的理想选择。采用双稳态 MEMS 睡眠晶体管门控的动态随机存取存储器 (DRAM) 电源轨可将刷新率降低约 6 个数量级。本文还介绍了双稳态 MEMS 睡眠晶体管的 CMOS 兼容制造的设计指南。在双稳态 MEMS 睡眠晶体管模式之间切换时，仅消耗约 0.31 pJ 的能量。 MEMS 栅极可以驱动大面积 CMOS 电路块，熔丝电流密度约为 0.5 mA/μm 2 。此外，双稳态 MEMS 睡眠晶体管的制造至关重要，因为其设计是在恢复力和粘附力之间发挥作用。