We investigate the effect of channel layer thickness on effective mobility ( $\mu _{\text {eff}}$ ) in the sub-10-nm regime of amorphous indium–gallium–zinc–oxide thin-film transistors ( $\alpha $ -IGZO TFTs). TFT devices with extremely scaled channel thickness ${t} _{{\alpha}-{\text {IGZO}}}$ of 3.6 nm were realized, exhibiting low subthreshold swing (SS) of 74.4 mV/decade and the highest effective mobility $\mu _{\text {eff}}$ of 34 cm ² / $V\cdot s $ at a carrier density ${N} _{Carrier}$ of $\sim 5 \times 10^{12}$ cm ⁻² for any kind of $\alpha $ -IGZO TFTs having sub-10-nm ${t} _{{\alpha}-{\text {IGZO}}}$ . No significant degradation of $\mu _{\text {eff}}$ is observed as $\alpha $ -IGZO thickness reduced from 6 to 3.6 nm. By scaling down the channel length ${L} _{\text {CH}}$ to 38 nm, high extrinsic transconductance ( ${G} _{m, \max}$ ) of $125~\mu \text{s}/\mu \text{m}$ (at ${V}_{\text {DS}}$ of 1 V) and ON-state current ${I} _{\text {ON}}$ of $350~\mu \text{A}/\mu \text{m}$ at ${V}_{\text {GS}}$ – ${V} _{T}$ of 3 V with ${V}_{\text {DS}}$ of 2.5 V are achieved.

中文翻译：

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沟道厚度小于10nm且沟道长度超标的非晶InGaZnO薄膜晶体管

我们调查了通道层厚度对有效迁移率的影响（ $ \ mu _ {\ text {eff}} $ ）在小于十纳米的非晶铟镓镓锌氧化物薄膜晶体管中 $ \ alpha $ -IGZO TFT）。TFT器件具有极高的沟道厚度 $ {t} _ {{\\ alpha}-{\ text {IGZO}}} $ 实现了3.6 nm的波长，具有74.4 mV /十倍的低亚阈值摆幅（SS）和最高的有效迁移率 $ \ mu _ {\ text {eff}} $ 34厘米 ² / $ V \ cdot s $ 在载流子密度下 $ {N} _ {Carrier} $ 的 $ \ sim 5 \ times 10 ^ {12} $ cm ^-2适用于任何类型 $ \ alpha $ -低于10nm的IGZO TFT $ {t} _ {{\\ alpha}-{\ text {IGZO}}} $ 。没有明显的降解 $ \ mu _ {\ text {eff}} $ 被观察为 $ \ alpha $ -IGZO厚度从6纳米减少到3.6纳米。通过缩小通道长度 $ {L} _ {\ text {CH}} $ 到38 nm，高非本征跨导（ $ {G} _ {m，\ max} $ ） 的 $ 125〜\ mu \ text {s} / \ mu \ text {m} $ （在 $ {V} _ {\ text {DS}} $ 1 V）和导通电流 $ {I} _ {\ text {ON}} $ 的 $ 350〜\ mu \ text {A} / \ mu \ text {m} $ 在 $ {V} _ {\ text {GS}} $ – $ {V} _ {T} $ 的3 V与 $ {V} _ {\ text {DS}} $ 达到2.5V。