Wearable bio-sensing devices are considered promising for ubiquitous heath monitoring. To accurately read out small bio-signals, the development of high-performance flexible front-end circuits is crucial. Oxide semiconductors are considered one of the most promising active channel materials for on-polymeric-foil electronics. In this article, a high-gain flexible complementary metal–oxide–semiconductor (CMOS) inverter with a beta ratio of 1, a desirable feature for device miniaturization, was demonstrated by monolithically integrating a top-gated n-type indium gallium zinc oxide (IGZO) thin-film transistor (TFT) and a bottom-gated p-type SnO TFT on a 5.5- $\mu \text{m}$ -thick polyimide substrate. The influence of atomic layer deposited (ALD)-HfO ₂ capping layer on the properties of oxide active channels has been analyzed. The flexible inverter exhibited a high static voltage gain of 370 V/V and balanced noise margins (noise margin high of 4.8 V, noise margin low of 4.7 V) for a supply voltage of 10 V. In addition, the voltage transfer characteristics remained virtually unchanged when the device was subjected to an outward or an inward bending radius of 2.5 mm, indicating the complementary oxide-TFT-based inverter is practical for flexible electronics applications.

中文翻译：

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高增益的基于柔性互补氧化物薄膜晶体管的逆变器

穿戴式生物传感设备被认为可广泛应用于健康监测。为了准确地读出小型生物信号，高性能灵活的前端电路的开发至关重要。氧化物半导体被认为是用于聚合箔电子的最有希望的有源沟道材料之一。在本文中，通过单片集成顶部浇口的n型铟镓铟锌氧化物（b），β值为1的高增益柔性互补金属氧化物半导体（CMOS）反相器（器件小型化的理想特性）得到了证明（ IGZO）薄膜晶体管（TFT）和底部栅极p型SnO TFT在5.5- $ \ mu \ text {m} $ 厚的聚酰亚胺基材。分析了原子层沉积（ALD）-HfO ₂覆盖层对氧化物有源沟道性能的影响。对于10 V的电源电压，该柔性逆变器具有370 V / V的高静态电压增益和平衡的噪声容限（噪声容限高4.8 V，噪声容限低4.7 V）。此外，电压传递特性实际上保持不变当器件经受2.5 mm的向外或向内弯曲半径时，其保持不变，这表明基于氧化物-TFT的互补反相器对于柔性电子应用是实用的。