Degradations of elevated-metal metal oxide (EMMO) thin-film transistors (TFTs) under positive bias stress (PBS) and positive bias illumination stress (PBIS) are systematically investigated and compared. An intrinsic correlation between PBS and PBIS degradation is demonstrated. Continuous negative threshold voltage ( ${V}_{\text {th}}$ ) shift is observed under both stresses, with similar time-dependent $V_{\text {th}}$ shift and recovery behavior. Characterization parameters for dependencies of ${V}_{\text {th}}$ shift on both stress ${V}_{G}$ and temperature are also very close for the two degradations. PBS and PBIS degradation of EMMO TFTs and their correlation can be consistently understood based on a unified model, which emphasizes stress-induced accumulation of doubly-ionized ${V}_{O}$ traps at the back-channel interface, and is verified with simulation.

中文翻译：

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带有或不带有照明的正栅极偏压下高金属氧化物（EMMO）TFT的统一退化模型

系统地研究和比较了正偏置应力（PBS）和正偏置照明应力（PBIS）下高架金属氧化物（EMMO）薄膜晶体管（TFT）的性能下降。证明了PBS和PBIS降解之间的内在联系。连续负阈值电压（ $ {V} _ {\ text {th}} $ ）在两种应力下均观察到位移，时间相关性相似 $ V _ {\ text {th}} $ 转移和恢复行为。依赖项的表征参数 $ {V} _ {\ text {th}} $ 转移两个压力 $ {V} _ {G} $ 对于这两种降解，温度和温度也非常接近。基于统一模型，可以一致地理解EMMO TFT的PBS和PBIS降解及其相关性，该模型强调应力诱导的双离子化积累 $ {V} _ {O} $ 捕获在反向通道接口处，并通过仿真进行验证。