A floating-gate (FG) cell as a circuit-level approach to control the threshold voltage of organic thin-film transistors (TFTs) operated in the transdiode configuration is presented. Charging and discharging of the FG are achieved by controlling the charge leakage through the gate dielectric of one of the organic TFTs that constitute the FG cell. Using programming voltages not exceeding 4 V, systematic tuning of the threshold voltage to values between −0.5 and 2.6 V was achieved. The versatility of the concept is demonstrated by employing organic-TFT-based FG cells as transdiodes with programmable threshold voltage in passive rectifiers and diode-load inverters fabricated on flexible, transparent plastic substrates. Rectifiers with programmable FG cells show flatter frequency response, improved 3-dB point, and reduced ripple compared to conventional rectifiers. Inverters with programmable FG-transdiode load have larger small-signal gain, larger output-voltage swing, and larger noise margins than conventional diode-load inverters.

中文翻译：

---

三端浮栅电池，用于有机薄膜晶体管的阈值电压控制

提出了一种浮栅（FG）单元，它是一种电路级方法，用于控制以跨二极管配置工作的有机薄膜晶体管（TFT）的阈值电压。通过控制电荷通过构成FG单元的其中一个有机TFT的栅极电介质的泄漏来实现FG的充电和放电。使用不超过4 V的编程电压，可以将阈值电压系统调节到-0.5至2.6 V之间的值。通过在柔性，透明塑料基板上制造的无源整流器和二极管负载逆变器中，将基于有机TFT的FG单元用作具有可编程阈值电压的跨二极管，可以证明该概念的多功能性。具有可编程FG单元的整流器显示出更平坦的频率响应，改进的3-dB点，与传统整流器相比，降低了纹波。具有可编程FG二极管负载的逆变器比传统的二极管负载逆变器具有更大的小信号增益，更大的输出电压摆幅和更大的噪声容限。