A novel photodetector for imaging in the visible–near infrared range is investigated. Unlike currently used detectors, the proposed device does not require thin-film filters for spectral discrimination. Instead, the discrimination relies on the wavelength-dependent absorption property of semiconductor materials. The detector consists of a window exposing the silicon substrate to the electromagnetic signal. Besides the window, multiple collectors separated by polysilicon gates are laid out. Proper voltage biasing establishes a different spectral response for each collector, thus creating a detection color space. Experimental results demonstrate the color detection capability of a three-collector imaging pixel from sensitivity metamerism index calculations. The sensor is fabricated in a standard 0.35- $\mu \text{m}$ CMOS process and presents a peak combined collectors’ responsivity of 0.35 A/W.

中文翻译：

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用于直接彩色成像的CMOS光电探测器

研究了一种在可见光-近红外范围内成像的新型光电探测器。与当前使用的检测器不同，所提出的设备不需要用于光谱识别的薄膜滤光片。取而代之的是，鉴别依赖于半导体材料的与波长有关的吸收特性。检测器由一个窗口组成，该窗口将硅基板暴露在电磁信号中。除了窗户外，还布置了多个被多晶硅栅极隔开的集电极。适当的电压偏置会为每个收集器建立不同的光谱响应，从而创建检测色空间。实验结果证明了根据灵敏度同色异谱指数计算得出的三收集器成像像素的颜色检测能力。该传感器采用标准0.35制成 $ \ mu \ text {m} $ CMOS工艺，并呈现出0.35 A / W的峰值组合集电极响应度。