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A Sun-Tracking CMOS Image Sensor With Black-Sun Readout Scheme
IEEE Transactions on Electron Devices ( IF 2.9 ) Pub Date : 2021-01-28 , DOI: 10.1109/ted.2021.3052450
Hyeon-June Kim

This article presents a black-sun readout scheme for CMOS image sensors (CISs) that utilizes the black-sun effect caused by a strong illumination condition. Based on the analysis of the black-sun phenomenon in CISs, the proposed CIS extracts the black-sun indication and its strength images while providing normal images without any degradation. By effectively utilizing the black-sun readout capability, a prototype CIS with the proposed readout scheme was identified as a useful solution to track the brightest source of light. In addition, the proposed black-sun readout scheme is reversible to the conventional readout scheme such that it can be used for various purposes in several electronic devices using CISs. The proposed readout scheme was verified in the typical CIS structure, and it shows the feasibility of utilizing it in sun tracking sensor applications for improving energy conversion efficiency. The prototype chip was implemented in a 0.11- $\mu \text{m}$ 1P4M CIS process with a 2.9- $\mu \text{m}$ pitch.

中文翻译:

具有黑太阳读出方案的太阳跟踪CMOS图像传感器

本文提出了一种针对CMOS图像传感器(CIS)的黑太阳读出方案,该方案利用了由强光照条件引起的黑太阳效应。基于对CIS中黑太阳现象的分析,提出的CIS提取了黑太阳指示及其强度图像,同时提供了正常图像而没有任何退化。通过有效利用黑太阳的读出功能,具有建议的读出方案的原型CIS被确定为跟踪最亮光源的有用解决方案。另外,所提出的黑阳读出方案与常规读出方案是可逆的,使得其可以在使用CIS的几种电子设备中用于各种目的。拟议的读出方案已在典型的CIS结构中得到验证,它显示了在太阳跟踪传感器应用中利用它来提高能量转换效率的可行性。原型芯片以0.11实现 $ \ mu \ text {m} $ 2.9-的1P4M CIS流程 $ \ mu \ text {m} $ 沥青。
更新日期:2021-02-26
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