Fabrication of dual-barrier planar (DBP) structure diamond Schottky barrier diodes (SBDs) with only Ni Schottky contact was carried out by rapid thermal annealing. Ni/Au narrow stripes were first patterned on $\text{p}^{-}$ layer and annealed at 550 °C to decrease Schottky barrier height and form low barrier contact. Then, Ni/Au Schottky electrodes were deposited on the window area between stripes to serve as high barrier contact. Ti/Pt/Au ohmic contact was formed on the back side of $\text{p}^{+}$ diamond substrate. The fabricated DBP structure SBDs exhibit low forward voltage drops compared with single high barrier diode, and reverse leakage current densities of two to three orders of magnitude smaller than that of single low barrier diode. The influence of stripes area proportion on device properties was investigated and the barrier height can be adjusted by changing dual-barrier ratio. This new device structure displays a small power dissipation of 0.54 W/cm ² , which is a promising technology for high power diamond diodes.

中文翻译：

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快速热退火制备双势垒平面结构金刚石肖特基二极管

通过快速热退火来制造仅具有Ni肖特基接触的双势垒平面（DBP）结构金刚石肖特基势垒二极管（SBD）。Ni / Au窄条纹首先被图案化 $ \ text {p} ^ {-} $ 层并在550°C退火以降低肖特基势垒高度并形成低势垒接触。然后，将Ni / Au肖特基电极沉积在条纹之间的窗口区域上，以用作高势垒接触。Ti / Pt / Au欧姆接触形成在 $ \ text {p} ^ {+} $ 金刚石基材。与单个高势垒二极管相比，所制造的DBP结构SBD具有较低的正向压降，并且反向泄漏电流密度比单个低势垒二极管小2至3个数量级。研究了条纹面积比例对器件性能的影响，并且可以通过更改双势垒比来调整势垒高度。这种新的器件结构显示出0.54 W / cm ²的小功耗 ，这是用于大功率金刚石二极管的有前途的技术。