For the termination in high-voltage SiC thyristor, this article proposes a single-mask implantation-free solution named aperture density modulation technique. Using this technique, the etching profile on the epitaxial layer can be controlled by the aperture layout on the mask. Thus, it can directly form the smoothly tapered junction termination extension with customizable slope profile. The experiments confirm this control ability on profiles with the extension length from 200 to 400 μm. The fabricated devices with the blocking voltage near 8 kV (~80%) demonstrate the feasibility as a termination technique. The numerical simulations present the potential to maintain this breakdown voltage within 120 μm. Therefore, a low-cost solution for high-voltage termination in SiC bipolar devices is expected using this technique.

中文翻译：

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基于孔径密度调制的高压 SiC 晶闸管端接单掩模免注入技术


针对高压SiC晶闸管的终端，本文提出了一种单掩模免注入解决方案，即孔径密度调制技术。使用这种技术，外延层上的蚀刻轮廓可以通过掩模上的孔径布局来控制。因此，它可以直接形成具有可定制坡度轮廓的平滑锥形结端接延伸。实验证实了这种对延伸长度为 200 至 400 μm 的型材的控制能力。所制造的器件具有接近 8 kV (~80%) 的阻断电压，证明了作为端接技术的可行性。数值模拟显示了将该击穿电压保持在 120 μm 以内的潜力。因此，预计使用这种技术可以为 SiC 双极器件中的高压端接提供低成本解决方案。