We report the characterization of the channel mobility properties of metal-oxide-semiconductor field-effect transistors (MOSFETs) on the heterogeneous $\beta $ -Ga ₂ O ₃ -on-SiC (GaOSiC) substrate fabricated by an ion-cutting process. The mobility of GaOSiC MOSFETs is significantly improved as the postannealing temperature of Ga ₂ O ₃ channel increases from 900 °C to 1200 °C. The GaOSiC transistor annealed at 1200 °C exhibits mobility consistent with the $\beta $ -Ga ₂ O ₃ donor wafer, which suggests that the defects in Ga ₂ O ₃ channel induced by the H ⁺ implantation for the ion-cutting step can be eliminated by the high-temperature annealing. As the ambient temperature ( ${T} _{{\mathrm {amb}}}$ ) increases from 0 °C to 150 °C, the mobility within the accumulation regime of GaOSiC MOSFETs decreases with the temperature following a ${T}_{{\mathrm {amb}}}^{-1}$ law, which is limited by the phonon scattering. The results of this work will be critically important for designing the transport properties of the GaOSiC channel, significantly advancing the development of Ga ₂ O ₃ power devices on high thermal conductivity substrate.

中文翻译：

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Ga-O-on-SiC MOSFET的沟道特性

我们报告了异质金属氧化物半导体场效应晶体管（MOSFET）的沟道迁移率特性的表征 $ \ beta $ 通过离子切割工艺制造的 -Ga ₂ O ₃ -SiC衬底（GaOSiC）。随着Ga ₂ O ₃通道的后退火温度从900°C升高到1200°C ，GaOSiC MOSFET的迁移率显着提高 。退火温度为1200°C的GaOSiC晶体管的迁移率与 $ \ beta $ -Ga ₂ O ₃供体晶片，这表明通过高温退火可以消除由用于离子切割步骤的H ⁺注入引起的Ga ₂ O ₃沟道 中的缺陷 。作为环境温度（ $ {T} _ {{\ mathrm {amb}}} $ ）从0°C升高到150°C，随着温度的升高，GaOSiC MOSFET的累积态迁移率随温度降低而降低。 $ {T} _ {{\ mathrm {amb}}} ^ {-1} $ 定律，这受到声子散射的限制。这项工作的结果对于设计GaOSiC通道的传输特性至关重要，这将极大地促进高导热率衬底上Ga ₂ O ₃功率器件的开发 。