The optimized postdeposition annealing (PDA) of the high- ${k}$ metal gate is investigated for 1/ ${f}$ noise performance improvement in FinFET technology by using spike annealing (SPA) and SPA-combined millisecond flash annealing (MFLA) treatment. It demonstrates that the additional MFLA can significantly reduce the 1/ ${f}$ noise without device performance degradation. Based on the low-frequency noise analysis, the reduced 1/ ${f}$ noise arises from the decrease in the density of interface traps ( ${D}_{\textit {it}}$ ) between Si-fin and interfacial layer (IL) that is prepared with $\text{O}_{{3}}$ -oxidation. Furthermore, the gate leakage is suppressed without equivalent oxide thickness (EOT) penalty, which is considered as the high- ${k}$ (HfO $_{{2}}{)}$ quality improvement from reducing oxygen vacancies and passivating the dangling bonds by forming a stronger Hf–N from additional MFLA.

中文翻译：

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FinFET技术中优化后高k沉积退火的低频噪声分析

高合金钢的优化后沉积退火（PDA） $ {k} $ 金属门被调查为1 / $ {f} $ FinFET技术中的噪声性能通过使用尖峰退火（SPA）和SPA组合毫秒毫秒快速退火（MFLA）处理得到了改善。它表明，附加的MFLA可以显着降低1 / $ {f} $ 噪声而不会降低设备性能。根据低频噪声分析，降低的1 / $ {f} $ 噪声来自界面陷阱密度的降低（ $ {D} _ {\ textit {it}} $ ）在硅鳍和界面层（IL）之间 $ \ text {O} _ {{3}} $ -氧化。此外，可以抑制栅极泄漏，而不会产生等效的氧化层厚度（EOT）损失，这被认为是高 $ {k} $ （HfO $ _ {{2}} {）} $ 通过减少氧空位和通过由额外的MFLA形成更强的Hf-N钝化悬空键来提高质量。