The ferroelectric (FE) polarization switching behavior in the HfZrO ₂ (HZO) FE/dielectric (FE/DE) stack is investigated systematically by charge responses from pulse measurements. The trapped charge density at the FE/DE interface related with the FE polarization switching is found to be $1.2\,\times \,10^{14}$ cm ⁻² according to the leakage-current-assist polarization switching mechanism. Furthermore, by the time-dependent nonswitching charge responses, the extra FE/DE interface trap density of $1.1\,\times \,10^{13}$ cm ⁻² is confirmed, which is not related but can be detected along with the FE polarization switching. The quantitative characterization reveals the huge amount of FE/DE interface traps and their dominant role in the FE operation of HZO FE/DE stack, which improves the proposed leakage-current-assist polarization switching model. This improved model provides a more comprehensive understanding of the polarization switching in the HZO FE/DE stack and new insights on HZO negative-capacitance (NC) and FE field-effect transistors (FETs).

中文翻译：

---

铁电/介电界面陷阱的定量表征

通过脉冲测量的电荷响应，系统地研究了HfZrO ₂（HZO）FE /电介质（FE / DE）堆中的铁电（FE）极化切换行为 。发现与FE极化切换有关的FE / DE接口处的俘获电荷密度为 $ 1.2 \，\ times \，10 ^ {14} $ cm ^-2根据漏电流辅助极化切换机制而定。此外，通过与时间有关的非开关电荷响应，FE / DE接口的额外陷阱陷阱密度为 $ 1.1 \，\ times \，10 ^ {13} $ 确认了cm ^-2，该cm ^-2不相关，但是可以与FE偏振切换一起检测。定量表征揭示了大量的FE / DE界面陷阱及其在HZO FE / DE堆栈的FE操作中的主导作用，从而改善了所提出的漏电流辅助极化切换模型。这种改进的模型提供了对HZO FE / DE堆栈中的极化切换的更全面的了解，以及有关HZO负电容（NC）和FE场效应晶体管（FET）的新见解。