The temperature dependence of the electron and hole impact ionization coefficients in GaN has been investigated experimentally. Two types of p-i-n diodes grown on bulk GaN substrates have been fabricated and characterized, and the impact ionization coefficients for both electrons and holes have been extracted using the photomultiplication method. Both the electron and hole impact ionization coefficients decrease as the temperature increases. The Okuto–Crowell model was used to describe the temperature dependence of the electron and hole impact ionization coefficients. Based on the measured impact ionization coefficients, the temperature dependence of the breakdown voltage of GaN non-punch through p-n diodes can be predicted; good agreement with experimentally reported results is obtained.

中文翻译：

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GaN中电子和空穴碰撞电离系数的温度依赖性

已经通过实验研究了GaN中电子和空穴撞击电离系数的温度依赖性。制备并表征了在块状GaN衬底上生长的两种类型的Pin二极管，并已使用光电倍增法提取了电子和空穴的碰撞电离系数。电子和空穴碰撞电离系数均随温度升高而降低。Okuto-Crowell模型用于描述电子和空穴撞击电离系数的温度依赖性。根据测得的碰撞电离系数，可以预测GaN非穿通pn二极管的击穿电压的温度依赖性；获得与实验报告的结果的良好一致性。