An organic nonvolatile memory is proposed based on the synergistic effect of the (three-aminopropyl) triethoxysilane (APTES) self-assembled monolayer (SAM) and the polystyrene (PS):eight-hydroxyquinoline (8-HQ) blend layer, where 8-HQ is used to provide the trapping sites for the nonvolatile memory, and PS is used to form the matrix for 8-HQ in order to improve the memory property. In addition, the introduced APTES SAM aims to further increase the memory window. Two kinds of PS:8-HQ blend films are adopted, with lower 8-HQ concentration of 50 mg/mL and high spin-coating speed of 5000 rpm to form smooth thin film, while with high 8-HQ concentration of 100 mg/mL and low spin-coating speed of 1000 rpm to form rough thick film. The roughness and the surface modification property of the PS:8-HQ blend film greatly affect the morphology of the active layer, and thus the shallow trap density is also influenced, which further affects the electrical characteristics and memory properties of the nonvolatile memory device. The better characteristics of the memory device with thin 8-HQ layer indicate the potential applications in many domains.

中文翻译：

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浅陷阱密度对基于八羟基喹啉的有机非易失性存储器件电学特性的影响

基于（三氨基丙基）三乙氧基硅烷（APTES）自组装单层（SAM）和聚苯乙烯（PS）：八-羟基喹啉（8-HQ）共混层的协同效应，提出了一种有机非易失性存储器，其中8- HQ用于为非易失性存储器提供捕获位置，而PS用于形成8-HQ的矩阵以提高存储性能。另外，引入的APTES SAM旨在进一步增加内存窗口。采用两种PS：8-HQ混合膜，较低的8-HQ浓度为50 mg / mL，较高的旋涂速度为5000 rpm，以形成光滑的薄膜，而较高的8-HQ浓度为100 mg / mL mL和低的1000 rpm旋涂速度形成粗糙的厚膜。PS的粗糙度和表面改性性能：8-HQ共混膜极大地影响了有源层的形貌，因此浅陷阱阱密度也受到了影响，这进一步影响了非易失性存储器件的电学特性和存储特性。具有8-HQ薄层的存储设备的更好特性表明其在许多领域中的潜在应用。