Hydrogen fuel has attracted significant attention as an alternative clean energy for hydrogen vehicles and household fuel systems and has been expected to be pervasive. Thus, compact, low-power, and highly sensitive hydrogen sensors capable of being embedded in Internet-of-Things devices are in demand. In this work, an ultrahigh sensitive hydrogen sensor operating at room temperature based on the Pt-decorated graphene (Pt/Gr) gate AlGaN/GaN metal–insulator–semiconductor high electron mobility transistor (MIS-HEMT) is presented. The proposed unique gate structure of island-like Pt on graphene not only modulates the density of 2-D electron gas (2DEG) but also provides efficient diffusion of hydrogen ions into the gate even at very low concentrations (< 1 ppm) of hydrogen. The fabricated Pt/Gr gate AlGaN/GaN MIS-HEMT hydrogen sensor shows a remarkably high response of $\sim 1.6\times 10^{7}$ in a hydrogen concentration of 1000 ppm at room temperature. Upon exposure of at most 1 ppm hydrogen gas, the current increases significantly by a factor of 15.4, exhibiting an unprecedentedly high hydrogen response. Furthermore, the proposed AlGaN HEMT architecture has an outstanding hydrogen selectivity and insensitivity to NH ₃ , H ₂ S, and CO gases at the same time.

中文翻译：

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铂装饰石墨烯栅极AlGaN / GaN MIS-HEMT用于超高灵敏度氢气检测

作为氢车辆和家用燃料系统的替代清洁能源，氢燃料已引起广泛关注，并且有望普及。因此，需要能够嵌入物联网设备中的紧凑，低功耗和高度灵敏的氢传感器。在这项工作中，提出了一种基于Pt装饰的石墨烯（Pt / Gr）栅极AlGaN / GaN金属-绝缘体-半导体高电子迁移率晶体管（MIS-HEMT）的在室温下工作的超高灵敏度氢传感器。在石墨烯上提出的岛状Pt独特的栅极结构不仅可以调节二维电子气（2DEG）的密度，而且即使在非常低的氢气浓度（<1 ppm）下也可以使氢离子有效扩散到栅极中。 $ \ sim 1.6 \ times 10 ^ {7} $ 在室温下氢气浓度为1000 ppm。暴露于最多1 ppm的氢气后，电流显着增加15.4倍，表现出前所未有的高氢气响应。此外，提出的AlGaN HEMT体系结构具有出色的氢选择性，同时对NH ₃ ，H ₂ S和CO气体不敏感 。