In this article, we present an experimental study on the impact of post-metallization annealing conditions on the negative-bias temperature instability (NBTI) of Si p-channel fin field-effect transistors (p-FinFETs) with atomic layer deposition tungsten (ALD W) as the gate-filling metal. The effects of annealing conditions on the tensile stress of the W film, impurity element concentration in the gate stack, fresh interface quality, threshold voltage shift ( ${\Delta }$ V $_{T}$ ), pre-existing traps ( ${\Delta } {N} _{\mathrm {HT}}$ ), generated traps, and their relative contributions were studied. The time exponents of ${\Delta }$ V $_{T}$ , the impacts of stress bias and temperature on NBTI degradation, and the recovery kinetics of the generated traps were analyzed. For devices with a B ₂ H ₆ -based W-filling metal, a 34% reduction in the fresh interface states, reduced ${\Delta }$ V $_{T}$ , and a 29% improvement in the operation overdrive voltage could be achieved by optimizing the annealing conditions. The NBTI is alleviated mainly because of the reduction in the generated traps, while the energy distribution of ${\Delta } {N} _{\mathrm {HT}}$ is insensitive to the annealing conditions. Furthermore, the relative contribution of the generated bulk insulator traps to the total number of generated traps could be reduced by optimizing the annealing conditions.

中文翻译：

---

通过退火工艺优化减轻具有ALD W栅极填充金属的Si p-FinFET的负偏压温度不稳定性

在本文中，我们对金属化后退火条件对具有原子层沉积钨（ALD）的Si p沟道鳍式场效应晶体管（p-FinFET）的负偏压温度不稳定性（NBTI）的影响进行了实验研究。 W）作为浇口填充金属。退火条件对W膜拉伸应力，栅叠层中杂质元素浓度，新鲜界面质量，阈值电压偏移的影响（ $ {\ Delta} $ 伏特 $ _ {T} $ ），预先存在的陷阱（ $ {\ Delta} {N} _ {\ mathrm {HT}} $ ），生成的陷阱及其相对贡献进行了研究。的时间指数 $ {\ Delta} $ 伏特 $ _ {T} $ ，分析了应力偏差和温度对NBTI降解的影响，以及所产生陷阱的恢复动力学。对于使用基于B ₂ H ₆ 的W填充金属的设备，新鲜界面状态减少了34％， $ {\ Delta} $ 伏特 $ _ {T} $ ，通过优化退火条件可以使工作过驱动电压提高29％。减少NBTI的主要原因是减少了产生的陷阱，而 $ {\ Delta} {N} _ {\ mathrm {HT}} $ 对退火条件不敏感。此外，可以通过优化退火条件来减少所产生的整体绝缘子陷阱对所产生的陷阱总数的相对贡献。