The liquid phase chemical enhanced oxidation (LPCEO) technique was applied to achieve planarized isolation of a high-indium-content In _0.52 Al _0.48 As/In _0.8 Ga _0.2 As metamorphic high-electron-mobility transistor (MHEMT). Through a simple, low-temperature process not requiring costly machinery, electrical isolation of components was accomplished. In addition, multiple advantages were gained, including the production of planarized surfaces, low pollution, and reduction in the subsequent disposal of wet etching solution and costs for dry etching or ion implantation. Because of the decrease in lateral defect density caused by wet or dry etching and the further decrease in gate leakage current owing to the isolated oxide film, the performance of devices, with improved DC characteristics, less flicker noise, and enhanced high-frequency performance, can be increased.

中文翻译：

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液相化学增强氧化处理In _0.52 Al _0.48 As / In _0.8 Ga _0.2 As变质高电子迁移率晶体管的平面沟槽隔离

应用液相化学增强氧化（LPCEO）技术来实现高铟含量In _0.52 Al _0.48 As / In _0.8 Ga _0.2的平面分离 作为变质高电子迁移率晶体管（MHEMT）。通过简单，不需要昂贵机械的低温工艺，就可以实现组件的电气隔离。另外，获得了多个优点，包括平坦化表面的产生，低污染以及减少随后的湿法蚀刻溶液的处置以及干法蚀刻或离子注入的成本。由于湿法或干法蚀刻导致的横向缺陷密度降低以及由于隔离的氧化膜而导致的栅极泄漏电流进一步降低，因此器件的性能具有改善的DC特性，较少的闪烁噪声和增强的高频性能，可以增加。