Sheet resistance (Rsheet) reduction of a-few-layered molybdenum disulfide (MoS2) film using sputtering is investigated in this study. To enhance the carrier density, chlorine (Cl2) gas excited by inductively coupled plasma is introduced as a substitute for sulfur. To electrically activate the Cl dopants and simultaneously prevent out-diffusion of sulfur, a furnace annealing was performed in sulfur-vapor ambient. Consequently, the Rsheet in the MoS2 film with the Cl2 plasma treatment remarkably reduced by one order lower than that without one, because of the activation of Cl dopants in the MoS2 film.

中文翻译：

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使用溅射和氯等离子体处理随后进行硫蒸气退火来降低 MoS钪 薄膜的薄层电阻


本研究研究了利用溅射降低多层二硫化钼 (MoS2) 薄膜的方块电阻 (Rsheet)。为了提高载流子密度，引入了由感应耦合等离子体激发的氯气（Cl2）作为硫的替代品。为了电激活 Cl 掺杂剂并同时防止硫向外扩散，在硫蒸气环境​​中进行炉内退火。因此，由于MoS2薄膜中Cl掺杂剂的活化，经过Cl2等离子体处理的MoS2薄膜中的Rsheet比没有经过Cl2等离子体处理的MoS2薄膜中的Rsheet显着降低了一个数量级。