This work presents the experimental evidence and impact of the conductivity modulation in the direct-bandgap GaN vertical PiN diode, by using pulse-mode and time-resolved characterizations as well as high-speed board-level switching tests. For the first time, the dependence of the forward transient behaviors in the vertical GaN PiN diode on time, current and temperature has been comprehensively investigated. The reduced ON-resistance (RON) with longer ON-state time, at higher current level or higher temperature verifies the conductivity modulation in the vertical GaN PiN diode in transient/dynamic level. Thanks to the limited trapping effects and conductivity modulation, the vertical GaN PiN diode can deliver superior dynamic RON performance after switching from high-voltage OFF state, showing great potential for high-power and high-efficiency power conversion.

中文翻译：

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垂直 GaN PiN 二极管中的电导率调制：证据和影响


这项工作通过使用脉冲模式和时间分辨特性以及高速板级开关测试，展示了直接带隙 GaN 垂直 PiN 二极管中电导率调制的实验证据和影响。首次全面研究了垂直 GaN PiN 二极管的正向瞬态行为对时间、电流和温度的依赖性。在较高电流水平或较高温度下，导通电阻 (RON) 降低，导通状态时间更长，验证了垂直 GaN PiN 二极管在瞬态/动态水平下的电导率调制。得益于有限的俘获效应和电导率调制，垂直GaN PiN二极管在从高压关断状态切换后可以提供卓越的动态RON性能，显示出高功率和高效率功率转换的巨大潜力。