The introduction of halogen elements for high-quality perovskite is attracting more interest because the understanding of halogen doping is still challenging. In this work, a facile elemental Pb initiated in situ Cl doping method is developed to prepare CH₃NH₃Pb(I_1-xClx)₃ films by drying, without annealing, at low temperatures (below 60 °C) for improved photovoltaic performances of perovskite. Improved film crystallinity, structure uniformity, and surface smoothness are obtained by Cl doping. In addition, Cl doping in the films is confirmed by x-ray photoelectron spectroscopy (XPS) study. The prepared Cl doped perovskite films are characterized by x-ray diffraction patterns, scanning electronic microscopy, and XPS. The perovskite solar cells with a configuration of FTO/ZnO/CH₃NH₃Pb(I_1-xCl_x)₃/spiro-OMeTAD/Au are fabricated and characterized. Cl doping induces better crystallinity and large grain sizes, leading to improved light-harvesting and device performance. Therefore, the method developed in this work represents a new strategy for perovskite film growth and high-performance photovoltaics.

中文翻译：

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元素Pb引发的原位Cl掺杂可改善钙钛矿的光伏性能

由于对卤素掺杂的理解仍然充满挑战，因此引入用于高质量钙钛矿的卤素元素引起了越来越多的兴趣。在这项工作中，开发了一种简便的原位Cl掺杂的Pb掺杂方法，以制备CH ₃ NH ₃ Pb（I _1-x Clx）₃通过在低温（低于60°C）下干燥（无需退火）薄膜来改善钙钛矿的光伏性能。通过Cl掺杂获得改善的膜结晶度，结构均匀性和表面光滑度。另外，通过X射线光电子能谱（XPS）研究证实了膜中的Cl掺杂。通过X射线衍射图，扫描电子显微镜和XPS表征制备的Cl掺杂的钙钛矿膜。具有FTO / ZnO / CH ₃ NH ₃ Pb（I _1-x Cl _x）₃构型的钙钛矿太阳能电池/ spiro-OMeTAD / Au已制造并表征。Cl掺杂引起更好的结晶度和较大的晶粒尺寸，从而改善了光收集和器件性能。因此，这项工作中开发的方法代表了钙钛矿膜生长和高性能光伏技术的新策略。