By a combination of magnetization M(T), M(H) and strain $\Delta$L/L_700K, $\Delta$L/L_0Oe, the positive magnetostrictions up to ∼5000 ppm originating from the rearrangement of tetragonal domains were observed in spinel Mn_0.85Mg_0.15V₂O₄, which exhibits two successive magnetic transitions at T_C ∼ 42 K and T^* ∼ 28 K. An anomalous magnetic hysteresis loop under a high field occurs below T^*, caused by the rearrangement of tetragonal domains. We found that the Mg-doping at the Mn site can effectively promote the positive magnetostriction in Mn_1-xMg_xV₂O₄ systems. Moreover, the remnant strain can be significantly lowered by Mg-doping due to the enhancement of magnetic anisotropy. These results provide a possible approach for further optimizing the performance of magnetic shape-memory materials.

中文翻译：

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通过在尖晶石MnV2O4中掺杂Mg来改善磁致伸缩性能

通过磁化强度M（T），M（H）和应变的组合$\Delta$升/升_700K，$\Delta$大号/大号_0Oe，正磁致伸缩高达从四方结构域的重排~5000 ppm的原产于尖晶石锰观察_0.85的Mg _0.15 V ₂ ø ₄，其在表现出两个连续的磁转变Ť _Ç〜42 K和Ť ^*〜28 K.由于四方晶畴的重排，在T ^*以下发生了高磁场下的异常磁滞回线。我们发现，Mn位处的Mg掺杂可以有效地促进Mn _{1- x} Mg _x V ₂ O _4中的正磁致伸缩。系统。而且，由于磁各向异性的增强，通过Mg掺杂可以显着降低残余应变。这些结果为进一步优化磁性形状记忆材料的性能提供了一种可能的方法。