Pairing two-dimensional semiconductors with ferroelectric films may allow for the development of hybrid electronic devices that would not only exhibit a combination of the functional properties of both material groups but would also reveal unusual characteristics emerging from coupling between these properties. Here, we report the observation of a considerable (up to 10³ at 0.8 V read bias) polarization-mediated tunneling electroresistance (TER) effect in Hf₀.₅Zr₀.₅O₂ (HZO) ferroelectric tunnel junctions (FTJs) employing MoS₂ as one of the electrodes. It was found that for this type of hybrid FTJs, a change in resistance upon polarization reversal could be described by Fowler–Nordheim tunneling. The underlying mechanism for the enhanced TER effect is a polarization-mediated accumulation or depletion of the majority carriers at the MoS₂/HZO interface, which results in a change in the effective barrier shape seen by the tunneling electrons. Given the compatibility of HfO₂-family ferroelectrics with CMOS technology and a possibility of large scale growth and transfer of MoS₂ films, our results provide a pathway for fabrication of high-density nonvolatile memory and data storage systems based on hybrid FTJs.

中文翻译：

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MoS2-Hf0.5Zr0.5O2异质结中的电阻效应

将二维半导体与铁电薄膜配对可以开发出混合电子设备，该混合电子设备不仅会展现两种材料组的功能特性的组合，而且会揭示出这些特性之间的耦合所产生的异常特性。在这里，我们报告了在Hf _0中观察到相当大的极化现象（在0.8 V的读取偏压下高达10 ³）的极化介导的隧穿电阻（TER）效应。₅ Zr ₀。使用MoS _2的5 O ₂（HZO）铁电隧道结（FTJ）作为电极之一。已经发现，对于这种类型的混合FTJ，可以通过Fowler-Nordheim隧道描述极化反转时电阻的变化。增强TER效应的基本机制是在MoS ₂ / HZO界面上多数载流子的极化介导积累或耗尽，这导致隧穿电子所见的有效势垒形状发生变化。鉴于HfO ₂族铁电体与CMOS技术的兼容性以及MoS ₂膜大规模生长和转移的可能性，我们的结果为基于混合FTJ的高密度非易失性存储器和数据存储系统的制造提供了一条途径。