High-density memory devices are essential to sustain growth in information technology (IT). Furthermore, brain-inspired computing devices are the future of IT businesses such as artificial intelligence, deep learning, and big data. Herein, we propose a facile and hierarchical nickel cobaltite (NCO) quasi-hexagonal nanosheet-based memristive device for multilevel resistive switching (RS) and synaptic learning applications. Electrical measurements of the Pt/NCO/Pt device show the electroforming free pinched hysteresis loops at different voltages, suggesting the multilevel RS capability of the device. The detailed memristive properties of the device were calculated using the time-dependent current–voltage data. The two-valued charge-flux properties indicate the memristive and multilevel RS characteristics of the device. Interestingly, the Pt/NCO/Pt memristive device shows a compliance current (CC)-dependent RS property; compliance-free RS was observed from 10⁻² to 10⁻⁴ A, and the compliance effect dominated in the range of 10⁻⁵–10⁻⁶ A. In CC control mode, the device demonstrated three resistance states during endurance and retention measurements. In addition, the device was successful in mimicking biological synaptic properties such as potentiation-depression- and spike-timing-dependent plasticity rules. The results of the present investigation demonstrated that solution-processable NCO nanosheets are potential switching materials for high-density memory and brain-inspired computing applications.

高密度存储设备对于维持信息技术（IT）的增长至关重要。此外，以大脑为灵感的计算设备是人工智能，深度学习和大数据等IT业务的未来。在此，我们提出了一种适用于多级电阻切换（RS）和突触学习应用的轻便且分级的钴镍矿（NCO）准六方纳米片基忆阻器件。Pt / NCO / Pt器件的电气测量结果显示了在不同电压下的电铸成型自由捏滞回线，表明该器件具有多级RS功能。使用随时间变化的电流-电压数据计算出器件的忆阻特性。二值电荷通量特性表示该器件的忆阻和多级RS特性。有趣的是，Pt / NCO / Pt忆阻器件显示出取决于顺从电流（CC）的RS特性；从10中观察到无合规的RS⁻²至10 ^-4  A，且顺应性效果在10 ^-5 –10 ^-6  A的范围内占主导地位。在CC控制模式下，该器件在耐久度和保持力测量期间显示出三种电阻状态。此外，该设备成功地模仿了生物突触特性，例如增强-抑制-和依赖尖峰-定时的可塑性规则。本研究的结果表明，可溶液处理的NCO纳米片是用于高密度记忆和脑启发计算应用的潜在开关材料。