Currently, the GaN-on-silicon high electron mobility transistor (HEMT) is a promising candidate to replace the Si Metal Oxide Semiconductor Field Effect Transistor (MOSFET) for high power electronics circuits. However, self-heating is still a challenging issue to be addressed, especially for high-current applications. In this paper, a GaN-on-Si HEMT with a diamond (Dia) heat spreader is proposed to suppress the self-heating effect. The performance of the proposed device is analyzed and compared with conventional GaN-on-Si and also GaN-on-SiC devices. The analysis was carried-out using technology computer aided design. The GaN-on-Si with diamond heat spreader suppresses the self-heating in the device and achieves higher saturation drain current than conventional GaN-on-Si. In addition, GaN-on-Si with Diamond heat spreader yields a higher transconductance and cut-off frequency than GaN-on-Si. This improved structure will provide a low cost device with enhanced thermal characteristics for higher power applications.

目前，硅上氮化镓高电子迁移率晶体管（HEMT）是有前途的候选材料，以取代用于大功率电子电路的硅金属氧化物半导体场效应晶体管（MOSFET）。但是，自加热仍然是一个有挑战性的问题，特别是对于大电流应用。在本文中，提出了一种带有金刚石（Dia）散热器的GaN-on-Si HEMT，以抑制自热效应。分析了所提出的器件的性能，并将其与常规的GaN-on-Si器件以及GaN-on-SiC器件进行了比较。使用计算机辅助设计技术进行分析。与传统的GaN-on-Si相比，带金刚石散热器的GaN-on-Si抑制了器件中的自热，并实现了更高的饱和漏极电流。此外，带有金刚石散热器的GaN-on-Si与GaN-on-Si相比具有更高的跨导和截止频率。这种改进的结构将为高功率应用提供具有增强的热特性的低成本器件。