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Introduction of Sr into Bi2Se3thin films by molecular beam epitaxy
Journal of Applied Physics ( IF 2.7 ) Pub Date : 2021-02-24 , DOI: 10.1063/5.0039761
L. Riney 1 , C. Bunker 1 , S.-K. Bac 1 , J. Wang 1 , D. Battaglia 1 , Yun Chang Park 2 , M. Dobrowolska 1 , J. K. Furdyna 1 , X. Liu 1 , B. A. Assaf 1
Affiliation  

SrxBi2Se3 is a candidate topological superconductor, but its superconductivity requires the intercalation of Sr into the van der Waals gaps of Bi2Se3. We report the synthesis of SrxBi2Se3 thin films by molecular beam epitaxy, and we characterize their structural, vibrational, and electrical properties. X-ray diffraction and Raman spectroscopy show evidence of substitutional Sr alloying into the structure, while transport measurements allow us to correlate the increasing Sr content with an increased n-type doping, but do not reveal superconductivity down to 1.5 K. Our results suggest that Sr predominantly occupies sites within a quintuple layer, simultaneously substituting for Bi and as an interstitial. We, thus, motivate future density functional theory studies to further investigate the energetics of Sr substitution into Bi2Se3.

中文翻译:

通过分子束外延将Sr引入Bi2Se3th薄膜中

Sr x Bi 2 Se 3是候选的拓扑超导体,但其超导性要求将Sr嵌入Bi 2 Se 3的范德华间隙中。我们报告了Sr x Bi 2 Se 3的合成薄膜通过分子束外延,我们表征其结构,振动和电学特性。X射线衍射和拉曼光谱显示出置换Sr合金进入结构的证据,而迁移率测量使我们能够将Sr含量的增加与n型掺杂的增加联系起来,但并未揭示低至1.5 K的超导性。 Sr主要占据五元组层中的位置,同时替代Bi和作为间隙。因此,我们激励未来的密度泛函理论研究,以进一步研究将Sr代入Bi 2 Se 3的能量学。
更新日期:2021-02-25
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