Sr_xBi₂Se₃ is a candidate topological superconductor, but its superconductivity requires the intercalation of Sr into the van der Waals gaps of Bi₂Se₃. We report the synthesis of Sr_xBi₂Se₃ thin films by molecular beam epitaxy, and we characterize their structural, vibrational, and electrical properties. X-ray diffraction and Raman spectroscopy show evidence of substitutional Sr alloying into the structure, while transport measurements allow us to correlate the increasing Sr content with an increased n-type doping, but do not reveal superconductivity down to 1.5 K. Our results suggest that Sr predominantly occupies sites within a quintuple layer, simultaneously substituting for Bi and as an interstitial. We, thus, motivate future density functional theory studies to further investigate the energetics of Sr substitution into Bi₂Se₃.

中文翻译：

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通过分子束外延将Sr引入Bi2Se3th薄膜中

Sr _x Bi ₂ Se ₃是候选的拓扑超导体，但其超导性要求将Sr嵌入Bi ₂ Se _3的范德华间隙中。我们报告了Sr _x Bi ₂ Se ₃的合成薄膜通过分子束外延，我们表征其结构，振动和电学特性。X射线衍射和拉曼光谱显示出置换Sr合金进入结构的证据，而迁移率测量使我们能够将Sr含量的增加与n型掺杂的增加联系起来，但并未揭示低至1.5 K的超导性。 Sr主要占据五元组层中的位置，同时替代Bi和作为间隙。因此，我们激励未来的密度泛函理论研究，以进一步研究将Sr代入Bi ₂ Se ₃的能量学。