Trench-fin MOSFETs, with their near-surface heat generation and the higher-surface area afforded by their geometry for thermal management, represent a promising solution to the thermal problems frequently encountered in lateral β-Ga₂O₃ devices. Here, we investigate potential thermal-management strategies for a vertical β-Ga₂O₃ trench-fin MOSFET through parametric analysis, offering recommendations on how best to design a device for maximal current density and excellent thermal performance. Primarily, by using a thermally conductive dielectric over the MOSFET structure, significant improvements to device power density may be achieved, aided by thermal spreading. Additionally, we find that by bonding thermal spreaders to its topside can yield significant improvements in thermal performance.

中文翻译：

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氧化镓垂直沟槽鳍式MOSFET的热管理策略

沟槽翅片的MOSFET，与它们的表面附近的热量产生和由它们的几何形状用于热管理提供的更高的表面积，代表一个有前途的解决方案，在横向的β-Ga经常遇到的热问题_2个ö ₃设备。在这里，我们探讨垂直潜在的热管理策略的β-Ga ₂ Ø ₃沟槽鳍式MOSFET通过参数分析，提供有关如何最佳设计器件以实现最大电流密度和出色热性能的建议。首先，通过在MOSFET结构上使用导热电介质，借助于热扩散，可以实现对器件功率密度的显着改善。此外，我们发现通过将散热器粘合到其顶部可以显着提高热性能。