Solution-processed semiconducting transition metal dichalcogenides are at the centre of an ever-increasing research effort in printed (opto)electronics. However, device performance is limited by structural defects resulting from the exfoliation process and poor inter-flake electronic connectivity. Here, we report a new molecular strategy to boost the electrical performance of transition metal dichalcogenide-based devices via the use of dithiolated conjugated molecules, to simultaneously heal sulfur vacancies in solution-processed transition metal disulfides and covalently bridge adjacent flakes, thereby promoting percolation pathways for the charge transport. We achieve a reproducible increase by one order of magnitude in field-effect mobility (µ_FE), current ratio (I_ON/I_OFF) and switching time (τ_S) for liquid-gated transistors, reaching 10⁻² cm² V⁻¹ s⁻¹, 10⁴ and 18 ms, respectively. Our functionalization strategy is a universal route to simultaneously enhance the electronic connectivity in transition metal disulfide networks and tailor on demand their physicochemical properties according to the envisioned applications.

溶液处理的半导体过渡金属二硫化物是印刷（光）电子学不断增加的研究工作的核心。然而，器件性能受到剥离过程导致的结构缺陷和薄片间电子连接不良的限制。在这里，我们报告了一种新的分子策略，通过使用二硫醇共轭分子来提高基于过渡金属二硫化物的器件的电性能，同时修复溶液处理的过渡金属二硫化物中的硫空位并共价桥接相邻的薄片，从而促进渗滤途径用于电荷传输。我们在场效应迁移率 ( µ _FE )、电流比 ( I _ON/ I _OFF ) 和液体门控晶体管的开关时间 ( τ _{S )，分别达到 10} ⁻²  cm ²  V ⁻¹  s ⁻¹、10 ⁴和 18 ms。我们的功能化策略是一种通用途径，可同时增强过渡金属二硫化物网络中的电子连通性，并根据预期应用按需定制其物理化学性质。