The SiC hetero-polytypes with perfect interfaces and no diffusion pollution are adopted to innovatively design the impact ionization avalanche transit-time (IMPATT) diodes. The performance of DC, large-signal and noise of the proposed diodes operating at the atmospheric low-loss window frequency 0.85 THz are estimated via numerically solving the fundamental device equations with and without quantum correction incorporated the tunnel and density-gradient of carriers. The influence from SiC hetero-polytype barriers and material properties on the performance of IMPATT diodes is analyzed. The advantages in power, efficiency and noise generating in the diodes of 4H/6H–SiC hetero-polytypes can be due to high critical breakdown electric field strength and weak ionizing in 4H–SiC and 6H–SiC. However, small power and heavy noise emerging from the devices of 3C/4H–SiC and 3C/6H–SiC hetero-polytypes can be owing to low critical breakdown electric field strength and strong ionizing in 3C–SiC. The noise electric field peaks arising from the strong ionizing layers while deviating from the interfaces in hetero-polytypes are illustrated. The evident quantum effect on the diodes without 3C–SiC while the slight effect on the devices included 3C–SiC are attributed to low-barriers embedded in the former diodes while high-barriers involved in the latter devices, respectively.

采用具有完美界面且无扩散污染的SiC杂多型创新地设计了碰撞电离雪崩渡越时间（IMPATT）二极管。通过数值求解基本器件方程，并在不考虑量子校正的情况下，通过对载流子的隧道和密度梯度进行了数值求解，可以估算在大气低损耗窗口频率0.85 THz下工作的拟议二极管的直流，大信号和噪声性能。分析了SiC杂多型势垒和材料性能对IMPATT二极管性能的影响。4H / 6H-SiC杂多型二极管在功率，效率和产生噪声方面的优势可能是由于4H-SiC和6H-SiC的高临界击穿电场强度和弱电离引起的。然而，3C / 4H-SiC和3C / 6H-SiC杂多型器件产生的小功率和重噪声可能是由于临界击穿电场强度低和3C-SiC中强电离引起的。示出了由强电离层引起的噪声电场峰，同时偏离了异质多型体中的界面。对于没有3C-SiC的二极管，明显的量子效应，而对包含3C-SiC的器件的轻微效应，分别归因于前者二极管中嵌入的低势垒，而后者中涉及的高势垒。