κ-gallium oxide (Ga₂O₃) layers were hetero-epitaxially grown on c-plane sapphire substrates by halide vapor phase epitaxy (HVPE). Pure (001)-oriented κ-Ga₂O₃ with high crystal quality was obtained with this method on sapphire at 800 °C. Furthermore, three in-plane rotational domains in the κ-Ga₂O₃ layers on sapphire substrates were revealed by XRD ϕ-scan and two typical domain regions were observed by high resolution transmission electron microscopy with selected area electron diffraction. The in-plane epitaxial relationship was proposed to be (010) κ-Ga₂O₃//(10$\bar{1}$0) Al₂O₃ and (110) κ-Ga₂O₃//(1$\bar{1}$00) Al₂O₃. The bandgap was calculated to be ~5.02eV from the optical transmittance spectrum.

通过卤化物气相外延（HVPE），在c面蓝宝石衬底上异质外延生长κ-氧化镓（Ga ₂ O ₃）层。纯的（001）面取向的κ-嘎₂ ö ₃具有高晶体质量的混合物在800℃在蓝宝石上的该方法获得的。此外，三面内的κ -镓旋转结构域₂ ö ₃在蓝宝石衬底上的层通过XRDφ扫描和两个典型的域区域显示通过用选择区域电子衍射高分辨率透射电子显微镜观察。面内的外延关系被建议将是（010）κ -镓₂ ö ₃ //（10$\stackrel{〜}{\mathrm{1个}}$0）的Al ₂ ö ₃和（110）κ -镓₂ ö ₃ //（1$\stackrel{〜}{\mathrm{1个}}$00）Al ₂ O ₃。由光透射光谱计算出带隙为〜5.02eV。