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Selective and sensitive photoelectrochemical aptasensor for streptomycin detection based on Bi4VO8Br/Ti3C2 nanohybrids
Journal of Hazardous Materials ( IF 13.6 ) Pub Date : 2021-02-25 , DOI: 10.1016/j.jhazmat.2021.125539
Fuheng You , Jie Wei , Yong Cheng , Zuorui Wen , Caifeng Ding , Nan Hao , Kun Wang

Sensitive detection of streptomycin (STR) has attracted increasing attention worldwide because of the relationship between food security and human health. In this paper, Bi4VO8Br/Ti3C2 nanohybrids were obtained by one-pot solvent hydrothermal method. It was modified on ITO electrode, and STR aptamer was acted as the recognition element. With excellent photoelectrochemical (PEC) performance of Bi4VO8Br/Ti3C2 nanohybrids, an “on-off-on” PEC aptasensor for STR detection was effectively developed. Compared with pure Bi4VO8Br, the photocurrent intensity of as-prepared Bi4VO8Br/Ti3C2 nanohybrids was about 9 times higher, which ascribed to the highly conductive of Ti3C2, driving the photogenerated electrons transferred to the ITO electrode rapidly, so that the recombination of photogenerated electron and hole pairs was inhibited viably. Furthermore, the constructed “on-off-on” PEC aptasensor accomplished STR detection with high sensitivity, excellent specificity and distinguished repeatability in honey. The photocurrent increased with the increment of STR concentration with the linear range from1 nM to 1000 nM, and the detection limit of 0.3 nM (S/N = 3). Compared with the national standard method (SN/T 1925-2007), the as-constructed PEC sensor showed the consistent results.



中文翻译:

基于Bi 4 VO 8 Br / Ti 3 C 2纳米杂交体的链霉素选择性和灵敏光电化学传感器

由于食品安全与人类健康之间的关系,链霉素(STR)的灵敏检测在全世界引起了越来越多的关注。本文采用一锅溶剂水热法制备了Bi 4 VO 8 Br / Ti 3 C 2纳米杂化物。在ITO电极上对其进行了修饰,并以STR适体作为识别元件。利用Bi 4 VO 8 Br / Ti 3 C 2纳米杂化物的优异的光电化学(PEC)性能,有效开发了用于STR检测的“开-关-开” PEC适体传感器。与纯Bi 4 VO 8 Br相比,制备的Bi 4的光电流强度VO 8 Br / Ti 3 C 2纳米杂化物约高9倍,这归因于Ti 3 C 2的高导电性,驱动光生电子迅速转移到ITO电极,从而抑制了光生电子与空穴对的复合。可行的。此外,构建的“ on-off-on” PEC适体传感器可实现STR检测,具有高灵敏度,出色的特异性和卓越的蜂蜜重复性。光电流随着STR浓度的增加而增加,线性范围为1 nM至1000 nM,检测极限为0.3 nM(S / N = 3)。与国家标准方法(SN / T 1925-2007)相比,如此构造的PEC传感器显示出一致的结果。

更新日期:2021-03-03
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