N-type β-Indium sulfide (β-In₂S₃) has emerged as one of the most promising semiconductor photoanode for use in photoelectrochemical water-splitting in recent years, its defective spinel structure facilitates the incorporation of foreign ions to adjust the photoelectrochemical (PEC) performance. Lanthanide ions with excellent optical properties and abundant energy level structure have attracted much attention. In this study, the semiconductor sensitized up-conversion strategy was first applied to improve the PEC performance of β-In₂S₃ by inhibiting electron-hole pairs recombination. Yb³⁺/Tm³⁺ co-doped β-In₂S₃ (YTS) were successfully prepared on FTO substrate in-situ as PEC water splitting photoanode by a simple hydrothermal method, the effects of Yb³⁺/Tm³⁺ co-doping on PEC properties, charge-transport properties and energy band structure are discussed. When Yb³⁺ ions in the total cations of precursor accounted for 3%, and Tm³⁺ ions accounted for 0.5%, the photocurrent density of Yb³⁺/Tm³⁺ co-doped β-In₂S₃ (YTS-3) is 0.42 mA/cm² (0.5 V vs. Ag/AgCl), which is about 1.68 times higher than pure β-In₂S₃ (0.25 mA/cm²). No photocurrent response was detected under 980 nm single-wavelength LED, proving that host material sensitization is more effective than direct excitation. The improved PEC properties for Yb³⁺/Tm³⁺ co-doped β-In₂S₃ might be attributed to the semiconductor sensitized up-conversion strategy, which realize a cycle of energy released by electron-hole pairs recombination. Moreover, the donor states formed after doping inhibits the recombination of electron-hole pairs by capturing electrons. The ways that the Yb³⁺/Tm³⁺ dopants modified the energy band structure and PEC properties of β-In₂S₃ demonstrated in this study have guiding significance for the design of lanthanide ions doped semiconductor photoanode.

N型β-硫化铟（β-在₂小号₃）已经成为用于在近年来光电化学水分解使用的最有希望的半导体光电阳极的一个，其有缺陷的尖晶石结构便于外来离子以调整光电化学的结合（PEC）性能。具有优异的光学性能和丰富的能级结构的镧系元素离子引起了人们的广泛关注。在这项研究中，半导体敏化上转换策略首先应用于提高的β-在PEC性能₂ š ₃通过抑制电子-空穴对的复合。的Yb ³⁺ / TM ³⁺共掺杂β-在₂ š ₃通过简单的水热法成功地在FTO衬底上原位制备了PEC水分解光阳极（YTS），讨论了Yb ³⁺ / Tm ³⁺共掺杂对PEC性能，电荷传输性能和能带结构的影响。当镱³⁺中前体的总阳离子离子占3％，和Tm ³⁺离子占0.5％，Yb组成的光电流密度³⁺ / TM ³⁺共掺杂β-在₂ š ₃（YTS-3 ）为0.42毫安/厘米²（0.5V相对于Ag / AgCl电极），大约是1.68倍，比纯β-在更高₂ š ₃（0.25毫安/厘米²）。在980 nm单波长LED下未检测到光电流响应，证明基质材料敏化比直接激发更有效。改进的PEC属性的Yb ³⁺ / TM ³⁺共掺杂β-在₂ š ₃可能归因于半导体敏化上转换策略，这实现由电子-空穴对复合的能量释放的周期。此外，掺杂后形成的施主态通过捕获电子来抑制电子-空穴对的重组。方式，所述的Yb ³⁺ / TM ³⁺掺杂剂改性的能带结构和PEC性质β-在₂ š ₃ 这项研究表明，对镧系离子掺杂半导体光阳极的设计具有指导意义。