Atomic layer deposition (ALD) of TiO₂ films from (CpMe₅)Ti(OMe)₃ as precursor and O₃ as co-reactant was examined. The high thermal stability of (CpMe₅)Ti(OMe)₃ enabled ALD reaction up to a high temperature of 345 °C. A wide temperature window from 182 to 345 °C was achieved in the ALD process, and the growth per cycle increased with increasing the temperature from 0.025 to 0.06 nm/cycle in the ALD window. The impurity content of the films decreased with increasing growth temperature. Above 291 °C, the carbon content in the films decreased to the level in a single crystalline Si substrate. The morphology with patterns spreading radially from the multiple points developed above 236 °C, and the size of the grains decreased as the growth temperature increased. Eventually, a uniform morphology with fine grains was obtained at temperatures > 300 °C. The films grown at the high temperatures exhibited superior dielectric properties. Other common metalorganic precursors of Ti usually restrict the use of high-temperature ALD because they are thermally unstable and decompose below 300 °C. Therefore, (CpMe₅)Ti(OMe)₃ is favorable for forming dense and high-purity TiO₂ films by ALD.

研究了以（CpMe ₅）Ti（OMe）₃为前驱体和O ₃为共反应剂的TiO ₂薄膜的原子层沉积（ALD）。（CpMe ₅）Ti（OMe）_3的高热稳定性使ALD反应温度高达345°C。在ALD过程中，实现了182至345°C的宽温度范围，并且在ALD范围内，随着温度从0.025 nm /周期增加到0.06 nm /周期，每个周期的增长都增加了。薄膜的杂质含量随着生长温度的升高而降低。高于291°C时，薄膜中的碳含量降至单晶Si衬底中的水平。在236°C以上，从多个点开始呈放射状扩展的形态，随着生长温度的升高，晶粒尺寸减小。最终，在> 300°C的温度下获得了具有细晶粒的均匀形态。在高温下生长的膜表现出优异的介电性能。Ti的其他常见金属有机前体通常限制高温ALD的使用，因为它们是热不稳定的，在300°C以下会分解。因此，（CpMe₅）Ti（OMe）₃有利于通过ALD形成致密，高纯度的TiO ₂薄膜。