A double-pole double-throw analog switch circuit structure with low power consumption, low on-resistance and capable of transmitting negative signals is designed in this paper, which has been developed in 0.18 μm BCD technology. The analog switch circuit is providing about 5 V high swing signal transmission for 2.7–5 V supply voltage in the temperature range of − 40 to 85 °C. The shortcomings of traditional analog switch structure are large on-resistance, large power consumption, etc. In this paper, the charge pump structure of the gate voltage bootstrap switch is designed to overcome the backgate effect, to control the turn-on and turn-off of each switching MOS transistor. A dynamic comparator structure is used to enhance the signal transmission capability, so that the analog switch can transmit negative signal. The measurement results show that under the voltage of 2.7–5 V, the overall designed circuit consumes 92 μW. The on-resistance of the analog switch is 3.9 Ω, and the leakage current is 12 nA. The analog switch has a good signal transmission and shutdown capabilities while occupying an area of 0.67 mm².

本文设计了一种双刀双掷模拟开关电路结构，该结构具有低功耗，低导通电阻并且能够传输负信号的特性，该结构是采用0.18μmBCD技术开发的。模拟开关电路可在−40至85°C的温度范围内为2.7–5 V的电源电压提供约5 V的高摆幅信号传输。传统模拟开关结构的缺点是导通电阻大，功耗大等。在本文中，栅极电压自举开关的电荷泵结构旨在克服背栅效应，控制导通和导通。每个开关MOS晶体管断开。动态比较器结构用于增强信号传输能力，从而使模拟开关可以传输负信号。测量结果表明，在2.7-5 V的电压下，整个设计电路的功耗为92μW。模拟开关的导通电阻为3.9Ω，泄漏电流为12 nA。模拟开关具有良好的信号传输和关闭功能，同时占用0.67 mm的面积²。