This paper presents the radio frequency (RF) measurements of an SPST switch realized in gallium nitride (GaN)/RF-SOI technology compared to its GaN/silicon (Si) equivalent. The samples are built with an innovative 3D heterogeneous integration technique. The RF switch transistors are GaN-based and the substrate is RF-SOI. The insertion loss obtained is below 0.4 dB up to 30 GHz while being 1 dB lower than its GaN/Si equivalent. This difference comes from the vertical capacitive coupling reduction of the transistor to the substrate. This reduction is estimated to 59% based on a RC network model fitted to S-parameters measurements. In large signal, the linearity study of the substrate through coplanar waveguide transmission line characterization shows the reduction of the average power level of H2 and H3 of 30 dB up to 38 dBm of input power. The large signal characterization of the SPST shows no compression up to 38 dBm and the H2 and H3 rejection levels at 38 dBm are respectively, 68 and 75 dBc.

中文翻译：

---

3D 集成 GaN/RF-SOI SPST 开关的 RF 小型和大型信号表征

本文介绍了在氮化镓 (GaN)/RF-SOI 技术中实现的 SPST 开关的射频 (RF) 测量结果，并与 GaN/硅 (Si) 等效物进行了比较。样本采用创新的 3D 异构集成技术构建。RF 开关晶体管是基于 GaN 的，衬底是 RF-SOI。在高达 30 GHz 时，获得的插入损耗低于 0.4 dB，同时比其 GaN/Si 等效值低 1 dB。这种差异来自晶体管与衬底的垂直电容耦合减少。根据拟合的 RC 网络模型，这种减少估计为 59%小号-参数测量。在大信号中，通过共面波导传输线表征对基板的线性度研究表明，H2 和 H3 的平均功率水平降低了 30 dB，输入功率高达 38 dBm。SPST 的大信号特性显示在高达 38 dBm 时没有压缩，38 dBm 处的 H2 和 H3 抑制电平分别为 68 和 75 dBc。