In this article, the performance of CIGSSe solar cells have been analyzed in two stages. Firstly, a conventional structure MgF₂/ZnO:B/CdS/CIGSSe/Mo has been simulated based on experimental data to validate the results. Three toxic-free, buffer layer materials ZnSnO, ZnS and ZnMnO have been used in the conventional structure. Secondly, the recombination loss has been reduced and external quantum efficiency (EQE) has been increased by adding p-type cuprous oxide (p-Cu₂O) layer at back surface field (BSF) contact. BSF acts as an electron reflected-hole transport layer (ER-HTL) in a conventional structure and proposed CIGSSe solar cell. The efficiency and EQE of the proposed Type-II solar cells have been increased by 5.94% and 2% respectively by optimizing cell parameters in terms of thickness, energy bandgap and doping concentration. It is shown that the proposed solar cell with ZnMnO as buffer layer achieves a conversion efficiency of 28.86%.

在本文中，CIGSSe太阳能电池的性能已分两个阶段进行了分析。首先，基于实验数据对常规结构MgF ₂ / ZnO：B / CdS / CIGSSe / Mo进行了模拟，以验证结果。常规结构中使用了三种无毒的缓冲层材料ZnSnO，ZnS和ZnMnO。其次，通过添加p型氧化亚铜（p-Cu ₂O）层在背面电场（BSF）接触处。在常规结构和提出的CIGSSe太阳能电池中，BSF用作电子反射空穴传输层（ER-HTL）。通过在厚度，能带隙和掺杂浓度方面优化电池参数，建议的II型太阳能电池的效率和EQE分别提高了5.94％和2％。结果表明，所提出的以ZnMnO作为缓冲层的太阳能电池的转换效率达到了28.86％。