In this study, a patterned InP/ZnS quantum dots photoresist (QDPR) film has been prepared via a laser-assisted route after the QDPR mixture solution composed of the as-synthesized InP/ZnS quantum dots (QDs) and the photoresist was spin-coated on the glass substrate at a room temperature for 60 min. The effects of the thickness of the film and the mass ratio of InP/ZnS QDs to photoresist on the photoluminescent quantum yield (PLQY) were investigated to confirm the potential application of InP/ZnS QDPR film in color conversion. The experimental results show that PLQY can be enhanced by up to 35.8% and the color coordinate can be changed from (0.26, 0.13) to (0.58, 0.24) with the assistance of 5.5 pairs of distributed Bragg reflectors (DBRs). The remarkable PLQY enhancement and color coordinate variation is mainly attributed to the DBR structures, which could integrate the emission light from the InP/ZnS QDPR color converter layer excited by the blue OLEDs and considerably reduce the transmittance of the blue light. On the basis of the results, the patterned InP/ZnS QDPR film, as the color conversion source, can exhibit a potential application in the next-generation full-color displays.

在这项研究中，在由原合成的InP / ZnS量子点（QD）组成的QDPR混合溶液和光致抗蚀剂旋转后，通过激光辅助途径制备了图案化的InP / ZnS量子点光刻胶（QDPR）膜。在室温下在玻璃基板上涂覆60分钟。研究了膜厚度和InP / ZnS QDs与光致抗蚀剂的质量比对光致发光量子产率（PLQY）的影响，以确认InP / ZnS QDPR膜在颜色转换中的潜在应用。实验结果表明，借助5.5对分布式布拉格反射器（DBR），PLQY可以提高35.8％，并且色坐标可以从（0.26，0.13）更改为（0.58，0.24）。PLQY的显着增强和色坐标变化主要归因于DBR结构，它可以整合来自被蓝色OLED激发的InP / ZnS QDPR色彩转换层的发射光，并显着降低蓝光的透射率。根据结果​​，图案化的InP / ZnS QDPR膜作为颜色转换源，可以在下一代全彩色显示器中显示出潜在的应用。