In this paper, a charge-based analytical model is proposed for double-gate MOSFETs working in the quasi-ballistic regime. The model includes both Lundstrom backscattering theory and conventional drift–diffusion theory. Both the theories are used to model the charge density along channel length, which are used to solve Poisson's equation to get the variation of the channel potential. To compute the ballistic segments and diffusive segments of the current, the calculated charge density and surface potential are used. The model is validated with reported numerical data of different channel length and found to be accurate.

中文翻译：

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包含载流子反向散射的MOSFET中准弹道传输的解析模型

本文针对准弹道状态下的双栅MOSFET提出了基于电荷的分析模型。该模型既包括Lundstrom反向散射理论，也包括传统的漂移扩散理论。两种理论均用于对沿沟道长度的电荷密度进行建模，用于求解泊松方程以获得沟道电势的变化。为了计算电流的弹道部分和扩散部分，使用了计算出的电荷密度和表面电势。使用不同通道长度的报告数值数据对模型进行了验证，发现该模型是准确的。